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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Batista, E. Dienot, J.-M. |
| Copyright Year | 2008 |
| Description | Author affiliation: Power Electron. Assoc. Res. Lab., Alstom Transp., Semeac (Batista, E.) |
| Abstract | This paper proposes a complete characterization approach for switching noise effects study on a new electromagnetic compatibility (EMC) multi-domain problematic with electronics embedded systems, mixing power components and integrated circuits in common volumes. In this context EMC 3D couplings effects, i.e. between power converter chip (MosPower, insulated gate bipolar transistor (IGBT)) and digital printed circuit board (PCB) with pulse width modulation (PWM) pattern, take place in more and more wide range of frequency, as 1 kHz - 1 GHz. Based on a general methodology called XVICE, the modeling approach is also presented. |
| Starting Page | 1 |
| Ending Page | 7 |
| File Size | 1518951 |
| Page Count | 7 |
| File Format | |
| ISBN | 9781424416998 |
| DOI | 10.1109/ISEMC.2008.4652057 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-08-18 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Computational modeling Insulated gate bipolar transistors Electromagnetic compatibility TEM cells Driver circuits Solid modeling Couplings Computer modelling EMC Couplings Emission Switching noise Power Transistors (IGBT) |
| Content Type | Text |
| Resource Type | Article |
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