NDLI: DC and noise characteristics of InP-based avalanche photodiodes for optical communication applications

Content Provider	IEEE Xplore Digital Library
Author	Ma, C.L.F. Deen, M.J. Tarof, L.E.
Copyright Year	1994
Description	Author affiliation: Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada (Ma, C.L.F.; Deen, M.J.)
Abstract	The DC and low frequency noise characteristics of InGaAs/InP planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode are reported. These devices have DC gains greater than 100 with about 0.3 /spl mu/W input power and breakdown voltages V/sub br/ of 56 V. At 0.9 V/sub br/, the dark current is typically 10 nA for a 30-/spl mu/m-diameter active area device. The theoretical calculations of dark currents indicates that the primary dark currents come from generation-recombination and diffusion currents in both active and periphery regions. The breakdown voltage is in agreement with the calculation, which shows that the partial charge sheet does prevent the premature breakdown in the periphery region. The shot noise power is determined to be proportional to I/sup 2.7/, in agreement with theory. The lack of 1/f noise indicates the partial charge sheet is a good design to replace conventional guard ring design.<>
Starting Page	1270
Ending Page	1273
File Size	446081
Page Count	4
File Format	PDF
ISBN	0780324161
DOI	10.1109/CCECE.1993.332488
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-09-14
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical noise Avalanche photodiodes Optical fiber communication Dark current Absorption Tunneling Delay Optical crosstalk Optical saturation Optical sensors
Content Type	Text
Resource Type	Article

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