NDLI: A hybrid genetic algorithm for MOSFET parameter extraction

Content Provider	IEEE Xplore Digital Library
Author	Antoun, G. El-Nozahi, M. Fikry, W. Abbas, H.
Copyright Year	2003
Description	Author affiliation: Mentor Graphics Corp., Cairo, Egypt (Antoun, G.)
Abstract	New transistor models are becoming more complex to accommodate the new effects introduced by shrinking channel length and new fabrication structures. Conventional parameter extraction techniques perform poorly when applied to these new models. In this paper, a new hybrid evolutionary algorithm is adopted in order to address the problems normally encountered in conventional algorithms and to obtain accurate parameter values. The algorithm relies on applying genetic algorithms (GA) in order to reach a near-optimal solution then a conventional least squares optimization process is applied to find the optimal parameter set. The proposed algorithm has outperformed both conventional parameter extraction techniques and pure GA-based ones. The proposed hybrid algorithm was tested on the available data for different 12 NMOS devices of different gate lengths and widths for the 0.35 mm technology. The evolutionary algorithm resulted in RMS fitting errors in the range form 0.5% to 1.5% compared to a value of 4% error when conventional parameter extraction techniques were applied.
Starting Page	1111
Ending Page	1114
File Size	290370
Page Count	4
File Format	PDF
ISBN	0780377818
ISSN	08407789
DOI	10.1109/CCECE.2003.1226091
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-04
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Genetic algorithms MOSFET circuits Parameter extraction Evolutionary computation Transistors Fabrication Least squares methods Testing MOS devices Fitting
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Hardware and Architecture

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