NDLI: Charge storage in Teflon AF films

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Charge storage in Teflon AF films

Content Provider	IEEE Xplore Digital Library
Author	Tingji Lu
Copyright Year	1996
Description	Author affiliation: Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China (Tingji Lu)
Abstract	The behavior of charge storage in corona charged and electron-beam irradiated Teflon AF films is investigated. Teflon AF film of 2 to 4 /spl mu/m thickness were prepared on glass substrates with Al and graphite electrodes by spin coating. Details of the experimental results are reported and discussed. For example, the measuring result of the laser-induced pressure pulse method shows that the velocity of the pressure pulse is 1.4 km/s. The maximum surface density depends mostly on the dielectric strength of the film, and the maximum potential of the free surface on the sample is directly proportional to the film thickness. The application of heat before, during or after charging can effectively improve the charge stability.
Starting Page	66
Ending Page	71
File Size	281922
Page Count	6
File Format	PDF
ISBN	0780326954
DOI	10.1109/ISE.1996.578044
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-09-27
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pulse measurements Optical pulses Surface charging Corona Glass Dielectric substrates Electrodes Coatings Dielectric measurements Velocity measurement
Content Type	Text
Resource Type	Article

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