NDLI: Charge distributions in electron-beam irradiated Kapton PI and Teflon FEP films

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Charge distributions in electron-beam irradiated Kapton PI and Teflon FEP films

Content Provider	IEEE Xplore Digital Library
Author	Yang, G.M. Sessler, G.M.
Copyright Year	1994
Description	Author affiliation: Inst. for Electroacoust., Tech. Univ. Darmstadt, Germany (Yang, G.M.; Sessler, G.M.)
Abstract	Charge distributions in 25 /spl mu/m thick films of Kapton PI and Teflon FEP, charged with 20 and 30 keV electron beams, are measured with the laser-induced pressure-pulse (LIPP) method directly after charging or after additional annealing periods at 120/spl deg/C. The charge distributions show changes with annealing time which suggest slow and fast retrapping, with Schubwegs at 120/spl deg/C of >20 /spl mu/m and /spl sim/5 /spl mu/m for PI and FEP, respectively. Corresponding /spl mu//spl tau/-products are >6/spl times/10/sup -9/ and /spl sim/10/sup -9/ cm/sup 2//V.
Starting Page	248
Ending Page	253
File Size	310871
Page Count	6
File Format	PDF
ISBN	0780319400
DOI	10.1109/ISE.1994.514776
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-09-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Current measurement Pulsed laser deposition Charge measurement Electrodes Surface charging Laser beam cutting Laser mode locking Pulse amplifiers Electron beams
Content Type	Text
Resource Type	Article

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