NDLI: Low-leakage current polysilicon TFTs for LCD pixel addressing

Content Provider	IEEE Xplore Digital Library
Author	Eno, Y. Masumo, K. Kunigita, M. Akatsuka, M. Yuki, M.
Copyright Year	1991
Description	Author affiliation: Asahi Glass Co. Ltd., Yokohama, Japan (Eno, Y.; Masumo, K.; Kunigita, M.; Akatsuka, M.; Yuki, M.)
Abstract	The leakage current characteristics of low-temperature polysilicon TFTs (thin-film transistors) below 450 degrees C have been investigated. It was confirmed that the laser-induced crystallized polysilicon with temperature below 450 degrees C has good physical properties and device characteristics in TFT, equal to those of polysilicon with a process temperature of around 600 degrees C. Reduction of leakage current at higher signal voltage could be achieved by the optimization of the geometrical structure with the laser-induced crystallized polysilicon TFT. The low leakage current characteristics at the higher signal voltage may enlarge the applicable field in the higher-performance display. For example, these improved characteristics make it possible to apply higher voltage for addressing pixels of normally white TN and LC (liquid crystal) polymer composite mode.<>
Starting Page	203
Ending Page	206
File Size	260468
Page Count	4
File Format	PDF
ISBN	0780302133
DOI	10.1109/DISPL.1991.167470
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-10-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Liquid crystal displays Leakage current Crystallization Voltage Liquid crystal polymers Laser theory Temperature Liquid crystal devices Laser modes
Content Type	Text
Resource Type	Article

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