NDLI: Batch-processing of high performance amorphous-silicon/silicon-nitride thin-film transistors (for active-matrix addressable LCD)

Content Provider	IEEE Xplore Digital Library
Author	Ahn, B.C. Kanoh, H. Sugiura, O. Matsumura, M.
Copyright Year	1991
Description	Author affiliation: Dept. of Phys. Electr., Tokyo Inst. Technol., Japan (Ahn, B.C.; Kanoh, H.; Sugiura, O.; Matsumura, M.)
Abstract	The low-temperature chemical-vapor-deposition (CVD) method has been applied to the batch process of amorphous-silicon/silicon-nitride thin-film transistors (a-Si/SiN TFTs). The high-performance a-Si/SiN TFTs (mobility >1 cm/sup 2//Vs, threshold voltage <7 V, and subthreshold voltage-swing <1.5 V/decade) have been fabricated with good reproducibility and uniformity over a wide range of CVD conditions. This feature makes the a-Si/SiN TFT batch-process practical. The films have the unique feature that their electronic properties change slightly within a wide range of CVD conditions. Thus, the CVD system can be optimized by adjusting the wall temperature to achieve the identical deposition rate along the gas flow. Then, uniform TFT characteristics can be obtained over large and stacked substrate surfaces.<>
Starting Page	85
Ending Page	88
File Size	274708
Page Count	4
File Format	PDF
ISBN	0780302133
DOI	10.1109/DISPL.1991.167439
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-10-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Silicon compounds Plasma properties Plasma density Gases Plasma displays Threshold voltage Polymer films Propellants Plasma temperature
Content Type	Text
Resource Type	Article

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