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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Iniguez, B. Picos, R. Kwon, I. Shur, M.S. Fjeldly, T.A. Lee, K. |
| Copyright Year | 2004 |
| Description | Author affiliation: DEEEA, Univ. Rovira i Virgili, Tarragona, Spain (Iniguez, B.) |
| Abstract | An appropriate distortion analysis requires an accurate modeling of the MOSFET drain current derivatives. We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behavior of the 3rd derivative in long and deep-submicron channel MOSFETs. Our modeling agrees well with experimental data and describes continuous transitions between operating regimes, thanks to the use of continuous functions, which do not introduce any artificial peaks. |
| Starting Page | 111 |
| Ending Page | 117 |
| File Size | 626490 |
| Page Count | 7 |
| File Format | |
| ISBN | 0780387775 |
| DOI | 10.1109/ICCDCS.2004.1393364 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-11-03 |
| Publisher Place | Dominican Republic |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Harmonic distortion Harmonic analysis Interpolation Physics Radio frequency Current-voltage characteristics Equations Surface resistance Circuit synthesis |
| Content Type | Text |
| Resource Type | Article |
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