NDLI: Use of Highly Reflective Ohmic Contact and Surface KrF Laser Roughening to Improve Light Output of Vertical GaN-Based Light-Emitting Diodes

Content Provider	IEEE Xplore Digital Library
Author	Wei-Chi Lee Kai-Ming Uang Der-Ming Kuo Jui-Chiang Chou Tron-Min Chen Hon-Yi Kuo Shui-Jinn Wang
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan (Wei-Chi Lee; Der-Ming Kuo; Jui-Chiang Chou; Hon-Yi Kuo; Shui-Jinn Wang) \|\| Dept. of Electr. Eng., WuFeng Inst. of Technol., Chiayi (Kai-Ming Uang; Tron-Min Chen)
Abstract	A highly reflective ohmic contact and surface roughening by KrF excimer laser technique to improve the optoelectronic properties of high-power vertical metallic-substrate GaN-based light-emitting diodes (VM-LEDs) were proposed and investigated. A metal system comprising of Ni/Ag/Ni was employed to serve as a reflector and ohmic contact to p-GaN, which exhibits a good ohmic contact $(3.05times10^{-4}$ Omega $cm^{2})$ and high reflectivity (89% at the wavelength of 465 nm) after thermal annealing at 500degC in $N_{2}$ ambient for 10 min. After the removal of sapphire using laser lift-off process (LLO), KrF excimer laser irradiation was adopted to etch the u-GaN layer and then roughen the surface of the exposed n-GaN layer. As compared to regular lateral-structure GaN-based LEDs with ITO transparent conduction layer (TCL), the fabricated VM-LEDs with a chip size of 1000 mumtimes1000 mum demonstrated a typical increase in light output power (Lop) (i. e., DeltaLop/Lop) by 325.5% at 350 mA with a decrease in forward voltage (Vf) from 3.67 V down to 3.41 V. As compared to the VM-LEDs with u-GaN etching employing inductively coupled plasma, about 125% enhancement in Lop has been obtained at 350 mA from the proposed samples.
Starting Page	141
Ending Page	142
File Size	2508456
Page Count	2
File Format	PDF
ISBN	9781424419425
ISSN	15483770
DOI	10.1109/DRC.2008.4800774
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts Rough surfaces Surface roughness Vertical cavity surface emitting lasers Light emitting diodes Etching Reflectivity Annealing Surface emitting lasers Indium tin oxide
Content Type	Text
Resource Type	Article

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