NDLI: Impact of physical defects on the electrical working of embedded DRAM with 0.35 /spl mu/m design rules

Content Provider	IEEE Xplore Digital Library
Author	Bichebois, P.
Copyright Year	1996
Description	Author affiliation: Centre Commun CNET, SGS Thomson, Crolles, France (Bichebois, P.)
Abstract	The impact of physical defects generated by the process has been studied on embedded Dynamic Random Access Memory (DRAM) chips, with 0.35 /spl mu/m design rules. In-line automatic inspections have been performed at several steps of the process, on deposited or etched layers, with a darkfield, pixel-to-pixel comparison system. The defects detected have been systematically reviewed and characterized with an optical microscope or a scanning electron microscope (SEM) with X-ray analysis. Electrical failures have been traced back to their origin. Analysis of the correlation between physical and electrical defects has highlighted the main causes of yield loss. Moreover, the physical defects have been subdivided into classes associated with different types of failure, thus enabling the yield to be predicted during the process.
Starting Page	124
Ending Page	130
File Size	834886
Page Count	7
File Format	PDF
ISBN	0818675454
ISSN	10636722
DOI	10.1109/DFTVS.1996.572011
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-11-06
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical microscopy Scanning electron microscopy Distributed power generation DRAM chips Etching X-ray detection X-ray detectors Automatic optical inspection Electron optics Optical losses
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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