NDLI: Metalorganic vapor phase epitaxy for specialty semiconductor devices

Content Provider	IEEE Xplore Digital Library
Author	Woelk, E. Bremser, M. Heuken, M. Juergensen, H.
Copyright Year	2000
Description	Author affiliation: AIXTRON Inc., Buffalo Grove, IL, USA (Woelk, E.)
Abstract	In this contribution we will present the technique of MOVPE and how it is used today to grow specialty materials and structures that are being investigated for application in future space missions. The material growth is highly developed and the work on devices is going on. We present the device concepts that can be realized using MOVPE. Among these are solar blind AlN UV detectors, high temperature FETs and bipolar transistors from GaN and SiC, low temperature FETs and bipolar transistors from GaAs, InP, GaInP, long wavelength lasers from Sb-compounds, to name but a few. We present the current trends in the production of the underlying film structures.
Starting Page	439
Ending Page	444
File Size	639655
Page Count	6
File Format	PDF
ISBN	0780358465
ISSN	1095323X
DOI	10.1109/AERO.2000.878519
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-03-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Epitaxial growth Epitaxial layers Semiconductor materials Temperature FETs Bipolar transistors Space missions Gallium nitride Silicon carbide Gallium arsenide
Content Type	Text
Resource Type	Article
Subject	Aerospace Engineering Space and Planetary Science

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Metalorganic vapor phase epitaxy for specialty semiconductor devices