NDLI: Annealing behavior of clustercarbon™ implants

Content Provider	IEEE Xplore Digital Library
Author	Sekar, Karuppanan Krull, Wade Chan, Jason McCoy, Steve Gelpey, Jeff
Copyright Year	2008
Description	Author affiliation: Mattson Technology Canada, 605 West Kent Ave, Vancouver, British Columbia - V6P 6T7, Canada (Chan, Jason; McCoy, Steve; Gelpey, Jeff) \|\| SemEquip, Inc., 34 Sullivan Road, North Billerica, Massachusetts 01862, USA (Sekar, Karuppanan; Krull, Wade)
Abstract	We report here the use of a novel cluster carbon $(C7H7^{+})$ implant along with n-type source drain dopant implants (As and P2) to form an embedded Silicon-Carbon (Si:C) layer. The implanted wafers were annealed using millisecond flash anneal (fRTP) followed by a post impulse spike RTP anneal (iRTP) for deactivation studies. The percentage of substitutional carbon ([C]subs) in the formed Si:C layer is characterized by a high-resolution x-ray diffraction (HRXRD) technique. The dependence of post spike anneal temperature on [C]subs show similar behavior for both As and P2 implants. With this clustercarbon implant approach the strain relaxation is only about 10% (90% strain retention) for the post spike anneal temperature of 1000°C. Higher flash anneal temperature leads to lower [C]subs. The sheet resistance is lower in the case of P2 implants when compared to As implants. We present here the detailed characterization of Si:C layer using HRXRD, SIMS, XTEM and activation of n-type dopants using SIMS and Rs measurements.
Starting Page	107
Ending Page	111
File Size	1574725
Page Count	5
File Format	PDF
ISBN	9781424419500
DOI	10.1109/RTP.2008.4690543
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-09-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Implants Atomic layer deposition Atomic measurements X-ray diffraction Capacitive sensors Electrical resistance measurement Temperature dependence Epitaxial growth Lattices
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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