NDLI: High productivity single wafer radical oxidation system

Please wait, while we are loading the content...

2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP)

2009 17th International Conference on Advanced Thermal Processing of Semiconductors

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors

2007 15th International Conference on Advanced Thermal Processing of Semiconductors

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

2005 13th International Conference on Advanced Thermal Processing of Semiconductors

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors [title page]

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors [Title page]

Conference committee

Table of contents

Information for authors

Call for papers: 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2006

Call for papers: 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2006

RTP Conference Achievement Awards

Robert MacKnight [biography]

Plenary session

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors

CMOS challenges of keeping up with Moore's Law

Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate dielectrics

Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes

Synthesis and control of ultra thin gate oxides for the 90 and 65 nm nodes

Suppression of thermal interface degradation in high-k film/Si by helium

Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation

Advanced thermal processing of semiconductor materials in the msec-range

Advanced activation and stability of ultra-shallow junctions using flash-assisted RTP

Laser processing

Laser Processing

Ultra shallow junctions formed by sub-melt laser annealing

Near-ideal implanted shallow-junction diode formation by excimer laser annealing

Green laser annealing with light absorber

Pyrometry for laser annealing

Long pulse laser thermal processing: annealing duration trade-off for next generation semiconductor hot processes

Advanced thermal processing I

Advanced thermal processing I

Non-contact characterization of several silicon oxides oxynitrides grown by rapid thermal processing

Manufacturability comparison of thin oxynitride films

SiON gate dielectric formation by rapid thermal oxidation of nitrided Si

SiON Gate Dielectric Formation by Rapid Thermal Oxidation of Nitrided Si.

Enabling single-wafer low temperature radical oxidation

Importance of heat-up ramp rate for palladium-silicide fully-silicided-gate structure formation

Multi-scale simulation of ultra-fast radiation anneal processes for robust process implementation

Advanced thermal processing II

Advanced thermal processing II

Combination of Plasma Doping and Flash anneal RTP for 45nm CMOS node

High Productivity Single Wafer Radical Oxidation System

High productivity single wafer radical oxidation system

Superior Spike Annealing Performance in 65nm Source/Drain Extension Engineering

Superior spike annealing performance in 65 nm source/drain extension engineering

Low temperature copper de-oxidation

The determination of annealing program for NiSi formation

Ultra low temperature NISI processing

Ni/sub 2/Si and NiSi formation by low temperature soak and spike RTPs

Thermal processing equipment

Thermal processing equipment

Advanced process control in RTP using the "relative power"

Calibration of a low-temperature cable-less lightpipe pyrometer on the NIST post-exposure bake test bed

Multiple reflection effects during the in-situ calibration of an emissivity independent radiation thermometer

Infrared emittance measurements at NIST

Physical aspects of particle deposition in RTP

Optimization in vacuum photothermal processing (VPP)

Heat transfer in microstructure

Heat transfer in microstructure

Process influences on the microstructural and electrical properties of rapid thermal chemical vapor deposited polysilicon

Temperature non-uniformity from combined conduction and radiation heat transfer within a doped wafer

Temperature and doping dependence of the radiative properties of silicon: Drude model revisited

The FDTD computation of electromagnetic wave scattering from surfaces

Rad-Pro: effective software for modeling radiative properties in rapid thermal processing

The accurate modeling of temperature response of semiconductor production wafers during rapid thermal processing

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004.

11th IEEE International Conference on Advanced Thermal Processing of Semiconductors. RTP 2003

10th IEEE International Conference of Advanced Thermal Processing of Semiconductors

9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001

High productivity single wafer radical oxidation system

Content Provider	IEEE Xplore Digital Library
Author	Yokota, Y. Agus Tjandra Kai Ma Sanaka, M. Moritz, K. Sharma, R.S. Forstner, H.
Copyright Year	2005
Description	Author affiliation: Appl. Mater. Inc., Santa Clara, CA (Yokota, Y.; Agus Tjandra; Kai Ma)
Abstract	This paper introduces a high productivity single wafer radical oxidation system developed for les90 nm device node. Today's semiconductor device manufacturers face dual challenges of increased technical complexity at virtually every process step, and fast introduction of new products with minimal cost. Up until now, furnaces have satisfied the thermal oxidation requirements in most fabs. The scaling of advanced devices requires higher quality oxides, tighter process control, and smaller thermal budgets at significantly reduced overall processing cost. RadOxtrade processes have already demonstrated advantages in a variety of applications for current devices, and have been well accepted by many device manufacturers. The availability of RadOxtrade processes on a reliable, small-footprint platform with reduced pressure capability will enable the technical advantages of single-wafer radical oxidation and the manufacturing requirements for today's economic environment. The Applied Vantagereg platform has already gained wide acceptance for implant and suicide anneals, and with the introduction of Applied Vantagereg RadOxtrade, the suite of applications is extended to include reduced pressure processes such as RadOxtrade. Process and system performance will be presented in this paper with emphasis on the chamber & platform technology elements that enable single-wafer radical oxidation on an industry-proven, cost-effective platform
File Size	2844546
File Format	PDF
ISBN	078039223X
DOI	10.1109/RTP.2005.1614330
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Productivity Oxidation Manufacturing processes Costs Semiconductor devices Semiconductor device manufacture Furnaces Process control Availability Environmental economics
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in