NDLI: Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes

Content Provider	IEEE Xplore Digital Library
Author	Shepard, J.F.Jr. Chou, A. Chudzik, M. Collins, C. Freiler, M. Wei He Kirsch, P. Loebl, A. Mo, R. Ronsheim, P. Rottenkolber, E. Wenjuan Zhu
Copyright Year	2005
Description	Author affiliation: IBM East Fishkill, Hopewell Junction, NY (Shepard, J.F.Jr.; Chou, A.)
Abstract	Thin gate oxide processes for advanced semiconductor manufacturing present many challenges at both the 90 and 65 nm technology nodes. In most cases the films are oxynitride materials $(SiO_{x}N_{y$ ) constructed in single wafer tools clustered on the same common platform. The combination of discrete process chambers and the atomic dimensions of the dielectric puts a premium on film characterization and process control. The electrical specifications are severe with common values of plusmn1 Aring leading to nitrogen and oxygen dose requirements of better than plusmn5E14 $at/cm^{2}.$ In the recent past difficulties maintaining those specifications have repeatedly lead to tool down situations and limited run paths. In the aftermath of those events, the investigations which followed exposed weaknesses in both the metrology and the qualification strategies used to characterize those processes. In this paper, a number of examples will be presented which illustrate the sensitivity of the composite process to excursions in any of its component steps. The relative sensitivities of different in-line measurement techniques (optical, electrical, and chemical) will be reported and the data used to illustrate the clear advantages of in-line compositional analysis
Starting Page	31
Ending Page	35
File Size	2676203
Page Count	5
File Format	PDF
ISBN	078039223X
DOI	10.1109/RTP.2005.1613681
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chemical analysis Manufacturing processes Semiconductor device manufacture Semiconductor films Dielectric materials Semiconductor materials Process control Nitrogen Metrology Qualifications
Content Type	Text
Resource Type	Article

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