NDLI: Characterizing implant behavior during flash RTP by means of backside diagnostics

Content Provider	IEEE Xplore Digital Library
Author	Ross, J. McCoy, S. Elliott, K. Gelpey, J. Downey, D.F. Arevalo, E.A.
Copyright Year	2002
Description	Author affiliation: Vortek Industries Ltd., Vancouver, BC, Canada (Ross, J.; McCoy, S.; Elliott, K.; Gelpey, J.)
Abstract	A promising new technique for achieving ultra-fast rapid thermal annealing of shallow implants is Flash-assist RTP/spl trade/ (fRTP/spl trade/). The Vortek fRTP tool produces a unique time-temperature profile on the wafer surface by first rapidly heating the bulk of the wafer to an intermediate temperature and then exposing the implanted surface of the wafer to an intense flash of radiation. The sudden increase and decrease of the wafer surface temperature results in a more gradual variation in the wafer backside temperature, which can be easily monitored with a radiometer. This paper describes the thermal physics involved in this annealing technique and shows how the backside measurement can be used to estimate the front-side temperature. The annealing behaviour of various boron and BF/sub 2/ implant conditions is presented. These data are presented graphically, in a manner that clarifies the advantages of fRTP over conventional spike annealing.
Starting Page	99
Ending Page	105
File Size	421219
Page Count	7
File Format	PDF
ISBN	0780374657
DOI	10.1109/RTP.2002.1039446
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-25
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Implants Rapid thermal annealing Electrical resistance measurement Capacitors Atmospheric measurements Water heating Temperature distribution Radiometry Physics Boron
Content Type	Text
Resource Type	Article

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