NDLI: The d-DotFET: MOSFET based on locally strained silicon

Content Provider	IEEE Xplore Digital Library
Author	Gerharz, J.C. Moers, J. Mussler, G. Grutzmacher, D.
Copyright Year	2012
Description	Author affiliation: Peter Grünberg Institut PGI 9, Institute for Semiconductor Nanoelectronics, Forschungszentrum Jülich, 52425. Germany (Gerharz, J.C.; Moers, J.; Mussler, G.; Grutzmacher, D.)
Abstract	In the d-DotFET device the strain introduced into a silicon capping layer grown on top of an ordered array of Ge islands is used. To achieve ordering and prevent randomly distribution of the Ge islands during epitaxial growth of Ge on silicon, template assisted self organization is utilized: the Si substrate is patterend by E-Beam lithography and subsequent reactive ion etching. During epitaxial growth by MBE the Ge islands grow in the predefined holes only, thus the position of the dots can be determined with a lateral accuracy of ±5 nm. This allows the alignment of the active device area to individual dots, thus utilizing the locally strained silicon layer. For MOSFETs were the dot will be preserved in the device, mobility enhancement of 22.5% can be achieved [1,2], while removing the dot leads to an mobility enhancement of 35%.
Starting Page	139
Ending Page	142
File Size	197313
Page Count	4
File Format	PDF
ISBN	9781467311977
e-ISBN	9781467311984
DOI	10.1109/ASDAM.2012.6418228
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-11
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Silicon Etching Strain Transistors Lithography
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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