NDLI: SEM techniques for characterization of GaN nanostructures and devices

Content Provider	IEEE Xplore Digital Library
Author	Satka, A. Kovac, J. Priesol, J. Vincze, A. Uherek, F. Michalka, M.
Copyright Year	2010
Description	Author affiliation: Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia (Satka, A.; Kovac, J.; Priesol, J.; Uherek, F.) \|\| International Laser Center, Ilkovičova 3, 841 04 Bratislava, Slovakia (Vincze, A.; Michalka, M.)
Abstract	The scanning electron microscope (SEM) techniques play a key role in the characterization of various inorganic and/or organic semiconducting materials, micro-/nanostructures and devices. The power of the SEM methods is mainly in imaging, characterization and diagnostics of local near surface properties. Among a variety of the SEM methods, Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC) methods have been extensively used for characterization of generation/recombination phenomena and electrical properties of bulk semiconductors and semiconductor structures [1]. Exploitation of these methods allow to visualize the electrically active defects such as dislocations, grain boundaries and inhomogeneities and to estimate the diffusion length, lifetime and surface recombination velocity of minority carriers. In addition, EBIC can be used for investigation and diagnostics of SCR of Schottky and p-n junctions, which extends its applications, in combination with other techniques such as Voltage Contrast (VC), to functional diagnostics of electronic devices biased at operation point. Currently, various modifications and improvements of “standard” SEM methods are developed to improve their resolution and sensitivity for investigations of advanced structures and devices structural, optical and electrical properties. Various sample preparation and micromanipulation / microprobe techniques are examined to localize appropriate signals with the aim to improve the spatial resolution while for extreme depth resolution low acceleration voltages of SEM techniques are utilized [2]. In addition, complex signal acquisition and processing techniques are implemented to achieve time and frequency resolution and to gain required information about the sample properties.
Starting Page	295
Ending Page	296
File Size	43973
Page Count	2
File Format	PDF
ISBN	9781424485741
e-ISBN	9781424485758
DOI	10.1109/ASDAM.2010.5667002
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-25
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scanning electron microscopy Gallium nitride Spatial resolution Signal resolution Luminescence HEMTs Nonuniform electric fields
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy

Fully coupled thermoelectroelastic simulations of GaN devices

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Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Time resolved EBIC study of InAlN/GaN HFETs

Sub-Micron Thermal Imaging Characterization of GaN HEMT and MMIC Devices

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