NDLI: Lattice stress gradients in thin films deposited by reactive sputtering

Content Provider	IEEE Xplore Digital Library
Author	Sutta, P.
Copyright Year	2000
Description	Author affiliation: Dept. of Phys., Mil. Acad., Liptovsky Mikulas, Slovakia (Sutta, P.)
Abstract	Among physical methods for thin films preparation, diode sputtering plays a very important role because almost all materials can be prepared by this technique. Reactive sputtering as a modification of this method is commonly used when preparing oxide and nitride thin films. Using r.f. reactive sputtering methods to obtain ZnO films, compressive stresses arise when a growing film is bombarded by energetic atoms or ions. A simple method to determine the lattice stress gradients in ZnO films by using the X-ray diffraction analysis of asymmetric line profiles is presented. The lattice stress gradient in ZnO films depends on the substrate temperature applied during the deposition and on the other conditions as substrate material used or on the ordering of layers in multilayered structures.
Starting Page	323
Ending Page	326
File Size	264894
Page Count	4
File Format	PDF
ISBN	0780359399
DOI	10.1109/ASDAM.2000.889511
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-10-16
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sputtering Lattices Substrates Residual stresses Zinc oxide Compressive stress X-ray diffraction Capacitive sensors Thermal stresses Transistors
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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