NDLI: Ionized-PVD by pulsed sputtering of Ta for metallization of high-aspect-ratio structures in VLSI

Content Provider	IEEE Xplore Digital Library
Author	Helmersson, U. Khan, Z.S. Alami, J.
Copyright Year	2000
Description	Author affiliation: Dept. of Phys., Linkoping Univ., Sweden (Helmersson, U.)
Abstract	Ionized metal deposition can be obtained from a magnetron source when using a pulsed power supply with extremely high power in the pulses. We have used peak power densities of several kW cm/sup -2/ with a repetition frequency of 50 Hz. To avoid overheating of the larger and the magnetron, a duty factor of less than 1% was used. The pulsed sputtering technique was employed for deposition of Ta thin films. The sputtering results in a very dense plasma with the ionized fraction of the deposited Ta flux arriving at a substrate (50 cm away from the source) estimated to be 60% or more (for P/sub Ar/=0.13 Pa and pulse energies /spl ges/6 J). This should be compared to normal dc sputtering where the degree of ionization could not be detected (<5%). This pulsed sputtering technique has a great potential for many industrial applications. One example is front-end metallization integrated circuits with high-aspect-ratio structures.
Starting Page	191
Ending Page	195
File Size	236905
Page Count	5
File Format	PDF
ISBN	0780359399
DOI	10.1109/ASDAM.2000.889479
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-10-16
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sputtering Metallization Very large scale integration Magnetic flux Pulsed power supplies Plasma density Magnetic semiconductors Substrates Optical films Magnetic fields
Content Type	Text
Resource Type	Article

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