NDLI: Al-Dy/sub x/O/sub y/-n-InP [100] structure preparation and properties

Content Provider	IEEE Xplore Digital Library
Author	Babushkina, N.V. Malyshev, S.A. Romanova, L.I.
Copyright Year	1998
Description	Author affiliation: Inst. of Electron., Acad. of Sci., Minsk, Byelorussia (Babushkina, N.V.)
Abstract	Al-Dy/sub x/O/sub y/-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy/sub x/O/sub y/ films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O/sub 2/ environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350/spl deg/C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-Dy/sub x/O/sub y/(I)-n-InP structure E/sub br/ is 2.5/spl times/10/sup 6/ V/cm, the effective positive surface charge Q/sub ss/ is /spl sim/3/spl times/10/sup 11/ cm/sup -2/ and the surface state density N/sub it/ is 5/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-Dy/sub x/O/sub y/ (II)-n-InP structure has surface charge magnitude Q/sub ss/ about /spl plusmn/1/spl times/10/sup 11/ cm/sup -2/ surface state density N/sub it//spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/, ionic type hysteresis 1-3 V and E/sub br//spl sim/5/spl times/10/sup 6/.
Starting Page	91
Ending Page	94
File Size	307585
Page Count	4
File Format	PDF
ISBN	0780349091
DOI	10.1109/ASDAM.1998.730174
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-05
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Mercury (metals) Hysteresis Oxidation Dielectrics and electrical insulation Semiconductor films Electric breakdown Dielectric losses Permittivity Cameras
Content Type	Text
Resource Type	Article

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