NDLI: Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers

Content Provider	IEEE Xplore Digital Library
Author	Krukovsky, S.
Copyright Year	1998
Description	Author affiliation: R&D Inst. for Mater. SRC Carat, Lviv, Ukraine (Krukovsky, S.)
Abstract	This work considers the experimental and calculated results concerning the LPE crystallization of GaAs, AlGaAs layers (10-30 nm) from Ga-Bi-melts at the temperature of 500-700/spl deg/C. Bi being an isovalent impurity decreased the growth rate of GaAs layer to 0.01-0.1 nm/s and, at the same time, it deletes background impurities from a melt. When active layers of Al/sub x/Ga/sub 1-X/As heterolaser (x=0.02-0.15) were doped by Yb and Bi it has been revealed that the conductivity inversion point is shifted towards lower concentration of Yb in a melt. Thus the low temperature LPE method and doping an active layer (Bi) allow the fabrication of low threshold injection semiconductor heterolaser.
Starting Page	79
Ending Page	82
File Size	329731
Page Count	4
File Format	PDF
ISBN	0780349091
DOI	10.1109/ASDAM.1998.730171
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-05
Publisher Place	Slovakia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well lasers Temperature Gallium arsenide Bismuth Substrates Crystallization Epitaxial growth Cooling III-V semiconductor materials Solvents
Content Type	Text
Resource Type	Article

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Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers