NDLI: Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks

Content Provider	IEEE Xplore Digital Library
Author	Bufler, F.M. Aubry-Fortuna, V. Bournel, A. Braccioli, M. Dollfus, P. Esseni, D. Fiegna, C. Gamiz, F. De Michielis, M. Palestri, P. Saint-Martin, J. Sampedro, C. Sangiorgi, E. Selmi, L. Toniutti, P.
Copyright Year	2010
Description	Author affiliation: IIS, ETH Zurich, CH-8092 Zürich, Switzerland (Bufler, F.M.) \|\| IEF, University Paris-Sud, CNRS, Orsay, France (Aubry-Fortuna, V.; Bournel, A.; Dollfus, P.; Saint-Martin, J.) \|\| ARCES-DEIS, University of Bologna, Italy (Braccioli, M.; Fiegna, C.; Sangiorgi, E.) \|\| DIEGM, Via delle Scienze 208, University of Udine, 33100 Udine, Italy (Esseni, D.; De Michielis, M.; Palestri, P.; Selmi, L.; Toniutti, P.) \|\| Nanoelectronics Research Group, University of Granada, Spain (Gamiz, F.; Sampedro, C.)
Abstract	Long-channel effective mobilities as well as transfer characteristics of a 32 nm single-gate SOI and a 16 nm double-gate (DG) MOSFET have been simulated with live different Monte Carlo (MC) device simulators. The differences are mostly rather small for the SOI-FET with quantum effects having a minor effect on threshold voltage due to the lowly doped channel, while the two multi-subband MC simulators show some prominent deviations in the case of the DG-FET. High-K mobility degradation by remote phonon scattering (RPS) in free carrier MC approximation leads to smaller performance degradation compared to multi-subband MC with remote Coulomb scattering (RCS) and RPS, but requires further investigations.
Starting Page	1
Ending Page	4
File Size	133024
Page Count	4
File Format	PDF
ISBN	9781424493838
e-ISBN	9781424493845
DOI	10.1109/IWCE.2010.5677952
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-26
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scattering Logic gates Monte Carlo methods Silicon Phonons MOSFET circuits Surface roughness
Content Type	Text
Resource Type	Article

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