NDLI: Simulations of complex nuclear events from high energy ion tracks in integrated circuits with 3D NanoTCAD

Content Provider	IEEE Xplore Digital Library
Author	Fedoseyev, A. Arslanbekov, R. Turowski, M.
Copyright Year	2010
Description	Author affiliation: CFD Research Corporation (CFDRC), Huntsville, Alabama, USA (Fedoseyev, A.; Arslanbekov, R.; Turowski, M.)
Abstract	We present a newly developed approach in Technology Computer Aided Design (TCAD) and circuit-device (mixed-mode) tools for automated simulations of nanoscale complex nuclear event effects from high energy ion tracks in integrated circuits for this multiscale problem. The approach includes automatic building of 3D models from integrated circuit layouts (GDSII), and generating and adaptation of computational mesh to fine nanoscale features of multi-branched high energy ion tracks produced by Vanderbilt University MRED/Geant4 package. Generation and parallel simulation of hundreds (or thousands) of events is automated with minimal user intervention. This approach allows significant increase in computation efficiency.
Starting Page	1
Ending Page	4
File Size	834266
Page Count	4
File Format	PDF
ISBN	9781424493838
e-ISBN	9781424493845
DOI	10.1109/IWCE.2010.5677944
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-26
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit modeling Adaptation model Three dimensional displays Solid modeling Computational modeling Transient analysis Inverters Geant4 models of radiation effects single event transients radiation hardening nuclear events TCAD MRED
Content Type	Text
Resource Type	Article

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