NDLI: Modelling the impact of discretized donor distribution for ultra-small scale transistors

Content Provider	IEEE Xplore Digital Library
Author	Machado, P.C.M. Snowden, C.M. Harrison, P.
Copyright Year	2000
Description	Author affiliation: Inst. of Microwaves & Photonics, Leeds Univ., UK (Machado, P.C.M.)
Abstract	When devices are scaled down into the ultra-submicron regime, the thermal de Broglie wavelength for electrons in semiconductors is of the order of the device dimensions. In such cases the semiconductor transport approaches the category of quantum transport. Such quantum transport theory may be based on the density matrix or on equivalent approaches such as the Wigner distribution function. Another way is to include quantum mechanical corrections to classical transport in ultra-submicron dimensions. Such an approach is used in this case: a set of quantum moment equations is developed from the Wigner function equation-of-motion, which preserves explicit quantum corrections as well as the classical hydrodynamic model features. We have applied this technique to an AlGaAs/GaAs HEMT, using discrete charge distribution and the equivalent uniform doping distribution, in a uniform grid with a mesh spacing equal to 2 nm.
Starting Page	157
Ending Page	158
File Size	173144
Page Count	2
File Format	PDF
ISBN	0852617046
DOI	10.1109/IWCE.2000.869973
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum mechanics Equations Matter waves Electrons Distribution functions Hydrodynamics Semiconductor process modeling Gallium arsenide HEMTs Doping
Content Type	Text
Resource Type	Article

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