NDLI: Atomistic simulation of quantum dots including strain and bandstructure and full band simulation of hole transport in 1-D heterostructures

Content Provider	IEEE Xplore Digital Library
Author	Klimeck, G. Bowen, R.C. Boykin, T.B.
Copyright Year	2000
Description	Author affiliation: Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA (Klimeck, G.)
Abstract	As microelectronic research moves devices to nanometer scale operating at GHz speeds, the physics of electron flow through devices becomes more complicated and physical effects, which previously could be ignored safely in microelectronic devices, become significant. High energy electron injection, quantization of charge, quantization of energy, and electron scattering interactions are some of the phenomena that are presently being investigated experimentally and theoretically. Raytheon/TI developed a 1-D quantum device simulator (NEMO-1D) to address such issues. That effort combined expertise in device physics, numerical and graphical user interface technologies to produce the first quantitative, general-purpose quantum device simulator. The work presented here is an extension of the of the NEMO 1-D software to massively parallel high performance computing to enable the simulation of hole transport and to 3-D modeling to enable quantum dot simulations.
Starting Page	6
Ending Page	7
File Size	283595
Page Count	2
File Format	PDF
ISBN	0852617046
DOI	10.1109/IWCE.2000.869893
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dots Capacitive sensors Computational modeling Electrons Microelectronics Physics Quantization Nanoscale devices Particle scattering Graphical user interfaces
Content Type	Text
Resource Type	Article

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