NDLI: Effect of passivation on AlGaN/GaN HEMT device performance

Content Provider	IEEE Xplore Digital Library
Author	Tilak, V. Green, B. Kim, H. Dimitrov, R. Smart, J. Schaff, W.J. Shealy, J.R. Eastman, L.F.
Copyright Year	2000
Description	Author affiliation: Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA (Tilak, V.)
Abstract	AlGaN/GaN HEMTs are suitable for high power applications because of their high breakdown voltages and high currents. However, the large signal performance of these devices is not as good as one would expect from the DC performance of the device. The large signal performance of the device is improved by depositing a thin layer of SiN by PECVD. In this work silicon nitride (SiN) was deposited in a variety of conditions on AlGaN/GaN HEMT structures on sapphire substrates to study the impact of the quality of SiN on the DC, breakdown, small signal and large signal performance of the device. A maximum increase in the output power from 1.3 W/mm to 2.3 W/mm at 4 GHz, 20 V bias was observed with a SiN passivation film, grown in NH/sub 3/ rich conditions and which gave the least etch rate of 25 nm/min in buffered oxide etch (6:1). This increase in power is mainly due to the increase in DC current. This is clearly shown by plotting the RF dynamic loadline for an unpassivated and passivated device.
Starting Page	357
Ending Page	363
File Size	323253
Page Count	7
File Format	PDF
ISBN	0780362586
DOI	10.1109/ISCS.2000.947182
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation Aluminum gallium nitride Gallium nitride HEMTs Silicon compounds Etching Substrates Electric breakdown Power generation Radio frequency
Content Type	Text
Resource Type	Article

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