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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Feteha, M.Y. |
| Copyright Year | 2000 |
| Description | Author affiliation: Inst. of Graduate Studies & Res., Alexandria Univ., Egypt (Feteha, M.Y.) |
| Abstract | Experimental investigation has been carried out to study the effect of gamma radiation (an energetic /sup 60/Co with photon energy of 1.25 MeV and absorbed dose of up to 380MRAD) on GaAs solar cell performance. P-n junction GaAs cell samples were used for showing the degradation in their performance with the gamma radiation. There is a reduction in short circuit current (I/sub sc/), open circuit voltage (V/sub oc/) and efficiency of 50%, 13.5% and 66% respectively for a dose of 380MRAD. The experimental results for GaAs cell is compared with results published for Si-cells. The C-V characteristic proves that there is a creation for extra recombination centers in case of a cell exposed to gamma radiation. |
| Starting Page | 91 |
| Ending Page | 96 |
| File Size | 201874 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780362586 |
| DOI | 10.1109/ISCS.2000.947134 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-10-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gamma rays Gallium arsenide Photovoltaic cells Degradation Silicon P-n junctions Circuits Capacitance-voltage characteristics Spontaneous emission Power supplies |
| Content Type | Text |
| Resource Type | Article |
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