NDLI: Analysis and optimal design of SiGe HBT low noise amplifier for GNSS receiver

Content Provider	IEEE Xplore Digital Library
Author	Yanbin Luo Min Qian Yebing Gan Chengyan Ma Ye Tianchun
Copyright Year	2015
Description	Author affiliation: Inst. of Microelectron., Beijing, China (Yanbin Luo; Min Qian; Yebing Gan; Chengyan Ma; Ye Tianchun)
Abstract	The paper presents a SiGe HBT low noise amplifier (LNA) for GNSS (Global Navigation Satellite System) receiver. The optimal design of the LNA was fabricated in HHNEC 180 nmSiGe BiCMOS technology. And the chip tested on PCB has demonstrated that the LNA obtains, at the GPS frequency point 1575.42MHz, a input return loss (S11) of -12dB, a power gain (S21) of 20.2dB, a noise figure (NF) of 0.86dB, a input 1dB compression point (IP1dB) of -13.5dBmand a input third-order intercept point (IIP3) of -4dBm while consuming only 4.2 mA from 1.8 V power supply. And the chip area is about 550μm×570μm.
Starting Page	9
Ending Page	12
File Size	1181527
Page Count	4
File Format	PDF
ISBN	9781467370042
e-ISBN	9781467370059
DOI	10.1109/ICCT.2015.7399783
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-18
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors Transconductance Integrated optics Optical imaging Optical receivers Optical sensors GNSS receiver Low noise amplifier BiCMOS Noise figure
Content Type	Text
Resource Type	Article

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Analysis and optimal design of SiGe HBT low noise amplifier for GNSS receiver