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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rui He Lihong Zhang |
| Copyright Year | 2008 |
| Description | Author affiliation: Fac. of Eng. & Appl. Sci., Memorial Univ. of Newfoundland, St. John's, NL (Rui He; Lihong Zhang) |
| Abstract | With the breathtaking advance of technology, the modern analog/mixed-signal design needs to consider the requirements of low voltage/power and the effects of the MOSFET channel length shrinking. Although a few different schemes have been proposed, the bulk-driven technique, which uses bulk terminal (the fourth terminal of a MOSFET) for signal input, is a promising solution to the low-voltage and low-power applications. However, the conventional MOSFET models are normally set up for the typical gate-driven applications (i.e., using gate terminal for signal input). Besides, due to shrinking MOSFET channels, those MOSFET models may not perform correctly and accurately for the bulk-driven applications, especially in the moderate inversion region. In this paper, we evaluate two MOSFET models including BSIM3V3 and EKV for the bulk-driven applications in a sub-micron CMOS technology. BSIM3V3 is a widely used model in the semiconductor industry, while the EKV model is suitable for the small-channel-length simulation. We focus on several critical MOSFET parameters for bulk-driven application and conduct thorough experiments using the two aforementioned models. The simulation results are analyzed to demonstrate the advantages of the bulk-driven technique compared to the gate-driven scheme in the low-voltage/low-power applications. Finally the performance of the two MOSFET models in the bulk-driven applications is summarized. |
| Starting Page | 105 |
| Ending Page | 108 |
| File Size | 613928 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424421664 |
| ISSN | 15483746 |
| DOI | 10.1109/MWSCAS.2008.4616747 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-08-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates MOSFET circuits Integrated circuit modeling Threshold voltage Semiconductor device modeling Capacitance Simulation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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