NDLI: Nonlinear charge modeling for FET large-signal simulation and its importance for IP3 and ACPR in communication circuits

Content Provider	IEEE Xplore Digital Library
Author	Root, D.E.
Copyright Year	2001
Description	Author affiliation: Agilent Technologies, Santa Rosa, CA, USA (Root, D.E.)
Abstract	Nonlinear charge-storage (capacitance) characteristics are significant contributors to FET large-signal performance, determining, along with the well-known current-source nonlinearities, the figures of merit important for communication circuits such as PAE, IP3, and ACPR. This paper reviews the general theory and practice of nonlinear two port charge-storage modeling for FET devices. Topics covered include identification of nonlinear capacitances from measured data, transcapacitances, the modeling constraints of terminal charge conservation and energy conservation and their consequences, and the necessary and sufficient conditions for the construction of unique device-specific nonlinear charge-based models from experimental device data. This approach is largely independent of process and technology, and is therefore generally applicable to FET devices from Si JFETs and MOSFETs to GaAs and InP HEMTs. The fundamental theory and general methodology are independent of the explicit functional form for the capacitance constitutive (C-V) relations, so they apply equally well to closed form analytical empirical models and table-based models based on interpolation or approximation of measured device characteristics.
Sponsorship	IEEE Circuits and Syst. Soc.
Starting Page	768
Ending Page	772
File Size	340997
Page Count	5
File Format	PDF
ISBN	078037150X
DOI	10.1109/MWSCAS.2001.986300
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-08-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FETs Capacitance-voltage characteristics Capacitance measurement Circuit simulation Current measurement Charge measurement Energy measurement Energy conservation Sufficient conditions JFETs
Content Type	Text
Resource Type	Article

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