NDLI: A simplified analytical model for nonlinear distortion in RF bipolar circuits

Content Provider	IEEE Xplore Digital Library
Author	Helmy, A. Sharaf, K. Ragai, H.
Copyright Year	2000
Description	Author affiliation: Integrated Circuit Lab., Ain Shams Univ., Cairo, Egypt (Helmy, A.)
Abstract	The nonlinear behavior of common-emitter (CE) and single-balanced BJT mixer (SBM) circuits is described by a simple closed-form interpretable analytical expression. The third-order intermodulation distortion (IM3) calculated by this approach is in good agreement with harmonic-balance results of an APLAC circuit simulator for different input signal level, biasing current, emitter degeneration and operating frequency range. In addition, the model can successfully identify the bias currents that lead to a minimum or maximum amount of distortion. Therefore, it provides an easy guideline for the designer to directly optimize the linearity performance among other conflicting performance parameters; gain, noise and power dissipation.
Starting Page	966
Ending Page	969
File Size	345094
Page Count	4
File Format	PDF
ISBN	0780364759
DOI	10.1109/MWSCAS.2000.952914
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-08-08
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models Nonlinear distortion Radio frequency Intermodulation distortion Circuit simulation Guidelines Design optimization Linearity Performance gain Power dissipation
Content Type	Text
Resource Type	Article

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A simplified analytical model for nonlinear distortion in RF bipolar circuits