NDLI: Advances in linearised GaAs MESFET circuit design techniques

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Optical IF signal distribution circuits for DBS receivers

Frequency deviation measuring circuit system for square-wave-FM signal

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Power system security assessment using a hybrid expert system/neural network architecture

Hybrid fault analysis system using neural networks and artificial intelligence

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Decentralized power system voltage control using artificial neural networks

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Extracting discontinuities in early vision with networks of resonant tunneling diodes

Advances in linearised GaAs MESFET circuit design techniques

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All CMOS analog pulse detection system for data storage applications

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Control implied input/output buffering of power conservative two port networks

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Large signal modelling of a boost converter with output filter

Generalization of the injected-absorbed-current dynamic analysis method of DC-DC switching power cells

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Operating modes and simulation of the series-parallel resonant converter

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Advances in linearised GaAs MESFET circuit design techniques

Content Provider	IEEE Xplore Digital Library
Author	Haigh, D.G. Radmore, P.M. Parker, A.E.
Copyright Year	1992
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Univ. CoIl., London, UK (Haigh, D.G.; Radmore, P.M.)
Abstract	Discusses the synthesis of linearized conductance functions using GaAs MESFETs which have an approximately square-law drain current versus gate-source voltage characteristic. The functions for realization are derived and implemented in three basic circuit configurations: transconductance, self-conductance, and buffer function. The new circuits outperformed previous circuits in terms of chip area, power consumption, and efficiency. The alternative concept of voltage linearization is introduced. It was used to realize lossless buffer circuits. Optimization of FET gate widths to allow a verified realistic FET model was demonstrated.<>
Starting Page	2037
Ending Page	2040
File Size	331206
Page Count	4
File Format	PDF
ISBN	0780305930
DOI	10.1109/ISCAS.1992.230375
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-05-10
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide MESFET circuits Voltage FETs Circuit synthesis Signal synthesis Educational institutions Mathematics Physics computing Transconductance
Content Type	Text
Resource Type	Article

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