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Measuring the threshold voltage of a MOSFET with an active attenuator

Content Provider	IEEE Xplore Digital Library
Author	Jiann-Horng Tsay Shen-Iuan Liu Yan-Pei Wu
Copyright Year	1996
Description	Author affiliation: Dept. of Electron. Eng., Lunghwa Junior Coll. of Technol. & Commerce, Taoyuan, Taiwan (Jiann-Horng Tsay)
Abstract	By using a MOS active attenuator which contains only two MOS transistors fabricated in a common substrate, a technique is presented to extract the threshold voltage of a MOSFET under tests. The active attenuator can be easily implemented with very small chip area in the test chips of a wafer and the extracting procedure can be performed quite fast. Hence, this technique is suitable for threshold voltage extraction that is important in MOSFET characterization and process monitoring. HSPICE Simulation and experimental results are given to verify this proposed scheme.
Starting Page	397
Ending Page	400
File Size	355505
Page Count	4
File Format	PDF
ISBN	0780330730
DOI	10.1109/ISCAS.1996.539968
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-05-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Attenuation measurement Voltage measurement Threshold voltage MOSFET circuits Attenuators Testing Semiconductor device measurement Educational institutions Business Performance evaluation
Content Type	Text
Resource Type	Article

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