NDLI: Experience with the new compact MEXTRAM model for bipolar transistors

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Proceedings of the 1991 Bipolar Circuits and Technology Meeting

Proceedings on Bipolar Circuits and Technology Meeting

Proceedings of the Bipolar Circuits and Technology Meeting

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Experience with the new compact MEXTRAM model for bipolar transistors

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Proceedings of the 1989 Bipolar Circuits and Technology Meeting (Cat. No.89CH2771-4)

F/sub T/ and R/sub B/S-parameter characterization using the common-collector mode

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

Experience with the new compact MEXTRAM model for bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	de Graaff, H.C. Kloosterman, W.J. Geelen, J.A.M. Koolen, M.C.A.M.
Copyright Year	1989
Description	Author affiliation: Philips Res. Lab., Eindhoven, Netherlands (de Graaff, H.C.; Kloosterman, W.J.; Geelen, J.A.M.; Koolen, M.C.A.M.)
Abstract	The improved performance of the compact bipolar transistor model MEXTRAM is demonstrated by comparison with Gummel-Poon (GP) model calculations and measured DC and high-frequency data. The MEXTRAM model contains extended modeling of the collector epilayer and the inactive region of the base-collector epilayer and the parasitic pnp. It has five internal nodes, whereas the GP model has three. The advantage is a more accurate prediction of the DC behavior and the f/sub t/ fall-off at high currents. The AC small-signal behavior at frequencies >or=f/sub t/ is dominated by the inactive part of the device. If unphysical fit parameters are accepted, the GP model can obtain in the forward mode up to the top of the f/sub t/ nearly as good a fit as MEXTRAM does; the predictive capability, especially for down-scaled devices, however, will remain inferior. This is a very important point for circuit optimization MEXTRAM has been used successfully in this area, e.g. for ECL gates.<>
Starting Page	246
Ending Page	249
File Size	264143
Page Count	4
File Format	PDF
DOI	10.1109/BIPOL.1989.69501
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-09-18
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors Voltage Semiconductor process modeling Equivalent circuits Physics Proximity effect Laboratories Frequency measurement Equations Predictive models
Content Type	Text
Resource Type	Article

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