NDLI: Local extraction of base and thermal resistance of bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Setekera, R. van der Toorn, R. Kloosterman, W.
Copyright Year	2013
Description	Author affiliation: EEMCS, Delft Univ. of Technol., Delft, Netherlands (Setekera, R.; van der Toorn, R.) \|\| Device Eng. & Characterization, NXP Semicond., Nijmegen, Netherlands (Kloosterman, W.)
Abstract	We extend the category of parameter extraction methods that utilize weak avalanche under fixed emitter current conditions to extract base resistance. Our new method consistently accounts for self-heating and Early effect so as to arrive at an accurate extraction of both base and thermal resistance. It involves only small variations in bias and temperature conditions, so that parameter extraction as a function of bias and temperature is enabled. The method is directly applicable to transistors - no dedicated test structures are needed - so that the method is cost effective. The method is demonstrated on RF SiGe HBTs.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	21
Ending Page	24
File Size	392619
Page Count	4
File Format	PDF
ISBN	9781479901265
ISSN	10889299
e-ISBN	9781479901296
DOI	10.1109/BCTM.2013.6798135
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Integrated circuits Thermal resistance Voltage measurement Digital video broadcasting Current measurement self-heating thermal resistance base resistance bipolar transistor Early effect avalanche multiplication
Content Type	Text
Resource Type	Article

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