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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chinthavali, M. Puqi Ning Yutian Cui Tolbert, L.M. |
| Copyright Year | 2011 |
| Description | Author affiliation: Oak Ridge Institute for Science and Education Oak Ridge, TN 37831-0117 USA (Puqi Ning) || Oak Ridge National Laboratory Oak Ridge, TN 37831-6472 USA (Chinthavali, M.; Tolbert, L.M.) || The University of Tennessee Knoxville, TN 37996-2100 USA (Yutian Cui) |
| Abstract | This paper presents an analysis of single discrete silicon carbide (SiC) JFET and BJT devices and their parallel operation. The static and dynamic characteristics of the devices were obtained over a wide range of temperature to study the scaling of device parameters. The static parameters like on-resistance, threshold voltage, current gains, transconductance, and leakage currents were extracted to show how these parameters would scale as the devices are paralleled. A detailed analysis of the dynamic current sharing between the paralleled devices during the switching transients and energy losses at different voltages and currents is also presented. The effect of the gate driver on the device transient behavior of the paralleled devices was studied, and it was shown that faster switching speeds of the devices could cause mismatches in current shared during transients. |
| Starting Page | 1076 |
| Ending Page | 1083 |
| File Size | 2150611 |
| Page Count | 8 |
| File Format | |
| ISBN | 9781424480845 |
| ISSN | 10482334 |
| e-ISBN | 9781424480852 |
| DOI | 10.1109/APEC.2011.5744728 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-03-06 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | JFETs Silicon carbide Temperature Logic gates Resistance Leakage current Switches |
| Content Type | Text |
| Resource Type | Article |
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