NDLI: Effect and utilization of common source inductance in synchronous rectification

Content Provider	IEEE Xplore Digital Library
Author	Yang, B. Zhang, J.
Copyright Year	2005
Description	Author affiliation: Int. Rectifier, Irvine, CA, USA (Yang, B.; Zhang, J.)
Abstract	Synchronous rectification is widely used in low voltage high current applications to reduce conduction loss. Common source inductance is the inductance shared by gate driver loop and main power transfer path. Minimization of common source inductance has been accepted as a common design rule for power converters using power MOSFET. In this paper, the effects of commons source inductance for control and sync FETs are explored in detail. In contrary to traditional belief, common source inductance of sync FET could provide significant benefits. With sync FET common source inductance, minimal dead time, shoot through prevention and Cdv/dt immunity could be achieved, and significant switching loss reduction could be realized for all types of synchronous rectifications.
Starting Page	1407
Ending Page	1411
File Size	677906
Page Count	5
File Format	PDF
ISBN	0780389751
DOI	10.1109/APEC.2005.1453213
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-03-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inductance MOSFET circuits Power MOSFET Switches Voltage Rectifiers FETs Buck converters Switching loss Diodes
Content Type	Text
Resource Type	Article

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Effect and utilization of common source inductance in synchronous rectification