NDLI: Effects of defects on the electrical and optical properties of ZnO thin films

Content Provider	IEEE Xplore Digital Library
Author	Xiaoqing Pan, Allenic, Arnold Wei Guo, Yanbin Chen, Yong Che,
Copyright Year	2008
Description	Author affiliation: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, 48109 USA (Xiaoqing Pan,; Allenic, Arnold; Wei Guo,; Yanbin Chen,) \|\| IMRA America, Inc., Ann Arbor, MI 48105, USA (Yong Che,)
Abstract	Zinc oxide is a wide band gap semiconductor with potential applications in optoelectronic devices. The greatest challenge for these applications is to fabricate reliable and stable p-type ZnO thin films. There exist many reports of p-type conductivity in ZnO films doped with group V elements.Ü However, little understanding of the role of defects, either native or induced by doping, on the onset of p-type conductivity and on the degradation of optical properties. In this talk, we will demonstrate the effects of crystal defects on the optoelectronic properties of p-type ZnO epitaxial thin films. We will show that the interplay between dopants and extended defects such as dislocations and stacking faults is fundamentally important for the fabrication of p-type ZnO. ZnO thin films doped with nitrogen, phosphorus and antimony were grown by pulsed laser ablation. We will show that dislocations can, under certain conditions, aid the formation of shallow acceptors. ThÜe role of dislocations on the dopant solubility, electrical transport properties and photoluminescence will be addressed. We will also show that depending on the oxygen chemical potential, different defect levels can be introduced in the band-gap. These defects result in various optical transitions that can provide useful information on the donors and acceptors formed. Finally, issues of homoepitaxy and p-n junction fabrication will be presented.Ü From these studies, we conclude that the fabrication of p-type ZnO films is trivial, however, a p-type epitaxial thin film with high structural quality is challenging.Ü
Starting Page	1
Ending Page	1
File Size	124227
Page Count	1
File Format	PDF
ISBN	9781424427444
ISSN	10994734
DOI	10.1109/ISAF.2008.4693879
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-02-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical films Zinc oxide Transistors Optical device fabrication Semiconductor thin films Conductivity Wide band gap semiconductors Optoelectronic devices Conductive films Semiconductor films
Content Type	Text
Resource Type	Article

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