NDLI: Doping Asymmetry Problem in ZnO: Current Status and Outlook

Content Provider	IEEE Xplore Digital Library
Author	Avrutin, V. Silversmith, D.J. Morkoç, H.
Copyright Year	1963
Abstract	ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3 eV at room temperature) and large exciton binding energy (60 meV) making this material, when alloyed with, e.g., Cd and Mg, especially attractive for light emitters in the blue/ultraviolet (UV) spectral region. Unfortunately, as with other wide-gap semiconductors, ZnO suffers from the doping asymmetry problem, in that the n-type conductivity can be obtained rather easily, but p-type doping proved to be a formidable challenge. This doping asymmetry problem (also dubbed as the p-type problem in ZnO) is preventing applications of ZnO in light-emitting diodes and potential laser diodes. In this paper, we provide a critical review of the current experimental efforts focused on achieving p-type ZnO and discuss the proposed approaches which could possibly be used to overcome the p-type problem.
Sponsorship	IEEE Publication
Starting Page	1269
Ending Page	1280
Page Count	12
File Size	941872
File Format	PDF
ISSN	00189219
Volume Number	98
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Conductivity Semiconductor device doping Light emitting diodes Zinc compounds Photonic band gap Excitons Conducting materials Impurities Thin film transistors ZnO point defects $p$-type
Content Type	Text
Resource Type	Article
Subject	Computer Science Electrical and Electronic Engineering

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