NDLI: Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Ihlefeld, J.F. Tian, W. Liu, Z.K. Doolittle, W.A. Bernhagen, M. Reiche, P. Uecker, R. Ramesh, R. Schlom, D.G.
Copyright Year	2008
Description	Author affiliation: Department of Materials Science and Engineering, University of California, Berkeley, 94720, USA (Ramesh, R.) \|\| Institute for Crystal Growth, D-12489 Berlin (Adlershof), Germany (Bernhagen, M.; Reiche, P.; Uecker, R.) \|\| Materials Research Institute, The Pennsylvania State University, University Park, 16802, USA (Ihlefeld, J.F.; Tian, W.; Liu, Z.K.; Schlom, D.G.) \|\| School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, 30332, USA (Doolittle, W.A.)
Abstract	BiFeO3 thin films have been deposited on (101) DyScO3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002°). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [112¿0] BiFeO3 ¿ [112¿0] GaN (SiC) plus a twin variant related by a 180° in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.
Starting Page	1
Ending Page	2
File Size	341819
Page Count	2
File Format	PDF
ISBN	9781424427444
ISSN	10994734
DOI	10.1109/ISAF.2008.4693774
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-02-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wide band gap semiconductors Gallium nitride Silicon carbide Molecular beam epitaxial growth Semiconductor thin films Aluminum gallium nitride Bismuth Sputtering Substrates Pressure control
Content Type	Text
Resource Type	Article

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