NDLI: Piezoelectric RF MEMS switches and phase shifters

Content Provider	IEEE Xplore Digital Library
Author	Polcawich, Ron Judy, Daniel Pulskamp, Jeffrey Trolier-McKinstry, Susan Dubey, Madan
Copyright Year	2008
Description	Author affiliation: US Army Research Laboratory, USA (Polcawich, Ron; Judy, Daniel; Pulskamp, Jeffrey; Dubey, Madan) \|\| Penn State, USA (Trolier-McKinstry, Susan)
Abstract	Piezoelectric thin films were utilized to actuate cantilevers for a radio frequency (RF) microelectromechanical system (MEMS) switches. Using lead zirconate titanate (PZT) thin films, an RF MEMS series switch was designed and fabricated. The switch operates from ¿25°C to 100°C with no change in actuation voltage of 9V. The switch isolation is better than ¿20 dB and the insertion loss (¿S21) less than 0.5 dB from DC to 40 GHz. In addition to improvements in switch performance, a 17 GHz, 2-bit reflection phase shifter has been demonstrated using PZT shunt switches operating at 15 V. Each of the 4 phase states are demonstrated with minimal phase error and an average insertion loss of 6.8 dB with a high of 8 dB for the longest phase state (limited by substrate losses highlighted in our previous work). Correcting the substrate loss reduces the insertion loss of the long phase state to less than 2 dB.
Starting Page	1
Ending Page	1
File Size	123726
Page Count	1
File Format	PDF
ISBN	9781424427444
ISSN	10994734
DOI	10.1109/ISAF.2008.4693746
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-02-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiofrequency microelectromechanical systems Switches Phase shifters Insertion loss Piezoelectric films Radio frequency Microelectromechanical systems Micromechanical devices Titanium compounds Voltage
Content Type	Text
Resource Type	Article

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