NDLI: An analysis of effects of device structures on retention characteristics in MFIS structures

Content Provider	IEEE Xplore Digital Library
Author	Okuyama, M. Takahashi, M. Sugiyama, H. Nakaiso, T. Kodama, K. Noda, M.
Copyright Year	2000
Description	Author affiliation: Dept. of Phys., Osaka Univ., Toyonaka, Japan (Okuyama, M.)
Abstract	Retention characteristics of Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structures have been studied theoretically by considering currents through the ferroelectric and insulator layers. The simulations have successfully reproduced the memory retention curves, and agree well with experimentally obtained curves. The numerical results have indicated that a slight increase of Schottky barrier height of the ferroelectric layer provides sufficiently long retention time for practical use. The idea of inserting an insulator film between metal and ferroelectric layers has been also examined in order to cut off the currents through the ferroelectric layer. This Metal-Insulator-Ferroelectric-Insulator-Semiconductor (MIFIS) structure has been found to exhibit much longer retention time than the original MFIS.
Starting Page	337
Ending Page	340
File Size	309679
Page Count	4
File Format	PDF
ISBN	0780359402
ISSN	10994734
DOI	10.1109/ISAF.2000.941567
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-07-21
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic field induced strain Ferroelectric materials Metal-insulator structures Polarization Dielectrics and electrical insulation Voltage Silicon Capacitors Dielectric constant Physics
Content Type	Text
Resource Type	Article

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