NDLI: The effects of Sr/Ti ratio on the step coverage of SrTiO/sub 3/ thin films fabricated using ECR-PEMOCVD

Content Provider	IEEE Xplore Digital Library
Author	Soon Yon Park Jongwan Choi Kwangsoo No
Copyright Year	2000
Description	Author affiliation: Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea (Soon Yon Park)
Abstract	SrTiO/sub 3/ thin films were deposited on Si(p-type 100), Pt(1000 /spl Aring/)/SiO/sub 2//Si and stepped Pt(800 /spl Aring/)/SiO/sub 2//Si substrates using ECR-PEMOCVD to study the effects of the deposition temperature and the composition on the properties of SrTiO/sub 3/ thin films. The crystallinity and the dielectric properties of SrTiO/sub 3/ thin films were improved as the deposition temperature increased. But we could observe a distinct correlation not between the step coverage and the deposition temperature but between the step coverage and the composition. The composition of the film was changed by changing the flow rate of carrier gas of one precursor but fixing the other, being the deposition temperature fixed at 550/spl deg/C. The step coverage was improved as the composition (Sr/Ti ratio) increased up to the stoichiometric composition, and showed a saturated value of about 55% as the Sr/Ti ratio increased beyond the stoichiometric composition. This correlation was speculated using the sticking coefficients of the precursor vapors.
Starting Page	59
Ending Page	63
File Size	368992
Page Count	5
File Format	PDF
ISBN	0780359402
ISSN	10994734
DOI	10.1109/ISAF.2000.941512
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-07-21
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Strontium Dielectric thin films Sputtering Plasma temperature Semiconductor thin films Binary search trees Random access memory Annealing Materials science and technology Dielectric substrates
Content Type	Text
Resource Type	Article

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