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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Masuda, Y. Fujita, S. Nishida, T. Masumoto, H. Hirai, T. |
| Copyright Year | 1998 |
| Description | Author affiliation: Dept. of Electr. Eng., Hachinohe Inst. of Technol., Japan (Masuda, Y.) |
| Abstract | Ferroelectric thin films of Pb(Zr,Ti)O/sub 3/ (PZT) were prepared on platinum (Pt) and SrRuO/sub 3/ (SRO) thin film electrodes by the fourth harmonic wave (/spl lambda/=266 nm) of a pulsed Nd/sup 3+/:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As a result, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer remained constantly more than 10/sup 11/ switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer. |
| Starting Page | 23 |
| Ending Page | 26 |
| File Size | 336517 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780349598 |
| ISSN | 10994734 |
| DOI | 10.1109/ISAF.1998.786627 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-08-24 |
| Publisher Place | Switzerland |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Degradation Transistors Ferroelectric materials Electrodes Polarization Buffer layers Platinum Optical pulses Neodymium Laser ablation |
| Content Type | Text |
| Resource Type | Article |
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