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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Buchanan, R.C. Roseman, R.D. Eufinger, K.R. |
| Copyright Year | 1996 |
| Description | Author affiliation: Dept. of Mater. Sci. & Eng., Cincinnati Univ., OH, USA (Buchanan, R.C.) |
| Abstract | Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties. |
| Starting Page | 887 |
| Ending Page | 890 |
| File Size | 398255 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780333551 |
| DOI | 10.1109/ISAF.1996.598168 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-08-18 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Mechanical factors Dielectric materials Ferroelectric materials Semiconductor materials Capacitive sensors Microstructure Strain control Neodymium Semiconductor device doping Sensor phenomena and characterization |
| Content Type | Text |
| Resource Type | Article |
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