NDLI: Permittivity Enhancement of <formula formulatype=inline><tex Notation=TeX>$hbox{Ta}_{2}hbox{O}_{5}/hbox{Co/Ta}_{2}hbox{O}

Content Provider	IEEE Xplore Digital Library
Author	Ding, Y. Yao, Y.D. Wu, K.T. Hsu, J.C. Hung, D.S. Wei, D.H. Lin, Y.H.
Copyright Year	1965
Abstract	Co inserted layer with different thickness on the permittivity of Ta₂O₅(60 nm)/Co(x nm)/Ta₂O₅(60 nm) trilayer films fabricated on the B270 glass substrates by the reactive sputtering technique was studied. The variation of dielectric constant of the samples is dependent on the thickness of the Co inserted layer observed from 1 kHz and 30 MHz. The dielectric constant of the Ta₂O₅(60 nm)/Co(x nm)/Ta₂O₅(60 nm) thin films was varied roughly from 7.9 up to 90.6 with the thickness (x) of the Co interlayer varied from 0 nm to 20 nm. The value of the dielectric constant is roughly near 7.9 for samples with x between 0 and 2 nm. However, it increases abruptly for samples with x larger than 2 nm, this large enhancement behavior of the dielectric constant could be explained due to the growth mechanism of the Cobalt inter-layer from island clusters to continuous Co layer for samples with x between 2 and 3 nm. For the magnetic induced ferroelectric variation, the variation of the dielectric constant increased with thickness of Co for samples with x larger than 3 nm. However this increase behavior is roughly saturated for applied magnetic field roughly above 20 Oe. This magnetic tunability of the dielectric constant is clearly attributed to the Co layer in the films. From the electric consideration, the adding of a Co inter-layer in Ta₂O₅/Co/Ta₂O₅ structures redistributes the interface charges between Co and Ta₂O₅ layers, and that enhances both the intrinsic polarization and its dielectric constant. The magnetoelectric properties in Ta₂O₅/Co/Ta₂O₅ films are manifested and it has potential for a ferroic sensor application.
Sponsorship	IEEE Magnetics Society
Starting Page	710
Ending Page	713
Page Count	4
File Size	467856
File Format	PDF
ISSN	00189464
Volume Number	47
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric constant Magnetoelectric effects Saturation magnetization Permittivity Scanning electron microscopy Soft magnetic materials ${\rm Ta}_{2}{\rm O}_{5}$ (tantalum pentoxide) Magnetoelectric permittivity (dielectric constant)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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