NDLI: Crystallization Behavior of the AgInSbTe Film

Content Provider	IEEE Xplore Digital Library
Author	Shi-Wei Chen Chin-Tien Yang Donyau Chiang
Copyright Year	1965
Abstract	The sputtered films of Ag_{4 3}In_6.2Te_30.5Sb₆₀ nominal composition subjected to the various laser powers treatment from the initializer are analyzed. The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance.
Sponsorship	IEEE Magnetics Society
Starting Page	551
Ending Page	555
Page Count	5
File Size	459960
File Format	PDF
ISSN	00189464
Volume Number	47
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Power lasers Jitter Metals Absorption uncompleted crystallization phenomenon AgInTeSb sputtered film direct overwriting initialization power short-range ordering synchrotron light
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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