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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Huadong Li Subramanyam, G. |
| Copyright Year | 1986 |
| Abstract | Thin-film ferroelectric capacitance can be obtained by 2 different methods. Capacitance obtained using the derivative of its hysteresis loop is related to large applied signals and can be called the large-signal capacitance. Capacitance measured directly with a small, applied ac signal together with a slow changing dc bias is called the small-signal capacitance. This paper investigated the voltage dependence of the large- and small-signal capacitances. Measurements show that the large-signal C-V curve of thin-film ferroelectrics has much sharper peaks and higher peak values than the small-signal C-V curve. Analyses based on the Landau-Khalatnikov model shows that practical small-signal capacitance is closer to the ideal capacitance. However, its C-V curve has clearance areas around the coercive voltage, and the polarization switching is not reflected in the small-signal capacitance. This causes the peaks of small-signal C-V curves to be lower than that of large-signal C-V curves. |
| File Size | 565398 |
| File Format | |
| ISSN | 08853010 |
| Volume Number | 56 |
| Issue Number | 9 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Ferroelectric materials Capacitance-voltage characteristics Voltage Hysteresis Capacitance measurement Polarization |
| Content Type | Text |
| Resource Type | Article |
| Subject | Acoustics and Ultrasonics Instrumentation Electrical and Electronic Engineering |
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