NDLI: Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate

Content Provider	IEEE Xplore Digital Library
Author	Ya-Ju Lee Ching-Hua Chiu Chih Chun Ke Po Chun Lin Tien-Chang Lu Hao-Chung Kuo Shing-Chung Wang
Copyright Year	1995
Abstract	The mechanisms of the excitation power dependent internal quantum efficiency in InGaN/GaN multiple quantum wells (MQWs) LEDs grown on the planar and the patterned sapphire substrates (PSS) at temperature of 15 and 300 K were investigated. From observation the tendency of emission peak energy and carrier lifetime variation in MQWs with different excitation power for both LED samples, we conclude the internal quantum efficiency would increase as coulomb screening effect dominates at lower carrier injection stage and decrease due to the band-filling effect at higher density stage. At room temperature, the majority of the initial injected carriers would be first consumed by the thermal activated nonradiative centers that hinder the further achievement of high-efficiency LED devices. Experimentally, the internal quantum efficiency of the LED grown on the PSS is ~70% and that of the LED grown on the planar sapphire substrate is ~62%. For the LED grown on the PSS, the observed higher internal quantum efficiency is due to the larger activation energy Therefore, the reduction of dislocation defects and the prevention of injected carriers escaping from extended states would be a promising prospective for InGaN/GaN MQWs LEDs to achieve high internal quantum efficiency.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1137
Ending Page	1143
Page Count	7
File Size	569764
File Format	PDF
ISSN	1077260X
Volume Number	15
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Light emitting diodes Quantum well devices Temperature LED lamps Rough surfaces Surface roughness Laser excitation Density measurement Wavelength measurement Internal quantum efficiency LEDs GaN
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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