NDLI: GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using <emphasis emphasistype=italic>In Situ</emphasis> <formula formulatype=inline><tex Notation=TeX>$hbox{SiH}_{bf 4}$</tex> </formula> Treatment Process During Epitaxial Growth

Content Provider	IEEE Xplore Digital Library
Author	Tsai, C.M. Jinn-Kong Sheu Wei-Chih Lai Ming-Lun Lee Shoou-Jinn Chang Chang, C.S. Ko, T.K. Shen, C.F.
Copyright Year	1995
Abstract	In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment (SiH₄ treatment) process that forms a thin SiN_x layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH₄ treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH₄ treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1275
Ending Page	1280
Page Count	6
File Size	358181
File Format	PDF
ISSN	1077260X
Volume Number	15
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Power generation Gallium nitride Rough surfaces Surface roughness Refractive index Etching Surface texture Materials science and technology Microelectronics textured interface GaN LED light-extraction efficiency $\hbox{SiH}_{4}$ treatment process
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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